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| PFR 850S 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVERTERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Forward Current Average Forward Current* Surge non Repetitive Forward Current Power Dissipation* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from case tp 20s Ta = 90C = 0.5 tp = 10ms Sinusoidal Ta = 90C DO-201AD (Plastic) Value 100 3 100 3.5 - 40 to + 175 - 40 to + 175 230 Unit A A A W C C Symbol VRRM VRSM Parameter 850S Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage 50 75 851S 100 150 PFR 852S 200 250 854S 400 450 856S 600 650 Unit V V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit C/W * On infinite heatsink with 10mm lead length. August 1996 - Ed: 1 1/3 PFR 850S 856S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25C Tj = 100C VF Tj = 25C IF = 3A Test Conditions VR = VRRM Min. Typ. Max. 10 250 1.25 V Unit A RECOVERY CHARACTERISTICS Symbol trr Tj = 25C VR= 30V IRM Tj = 25C VR= 30V Test Conditions IF = 1A diF/dt = - 25A/s IF = 1A diF/dt = - 25A/s PRF 850S 854S PRF 856S Min. Typ. Max. 150 200 2 A Unit ns 2/3 PFR 850S 856S PACKAGE MECHANICAL DATA DO-201AD B note 1 A E E B note 1 OC OD note 2 OD DIMENSIONS NOTES Millimeters Inches Min. Max. Min. Max. A 9.50 0.374 B 25.40 1.000 1 - The lead diameter D is not controlled over zone E 5.30 0.209 C 1.30 0.051 2 - The minimum axial lengh within which the device may be D placed with its leads bent at right angles is 0.59"(15 mm) E 1.25 0.049 Weight : 1 g Marking : Type number White band indicates cathode cooling method : by convertion (method A) Date code REF. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 3/3 |
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